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NTMSD2P102LR2
1500
5
20
V DS = 0 V
V GS = 0 V
QT
18
1200
C iss
T J = 25 ° C
4
16
14
900
600
C rss
C iss
3
2
Q1
Q2
V GS
12
10
8
6
300
0
C oss
C rss
1
0
V DS
I D = ?2.4 A
T J = 25 ° C
4
2
0
10
5
0
5
10
15
20
0
2
4
6
8
10
12
14
?V GS ?V DS
GATE?TO?SOURCE OR DRAIN?TO?SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage versus Total Charge
1000
V DD = ?10 V
I D = ?1.2 A
V GS = ?2.7 V
100
t d (off)
t r
t f
t d
100
t r
10
(on)
10
t d (off)
t d (on)
t f
1.0
V DD = ?10 V
I D = ?2.4 A
V GS = ?4.5 V
1.0
10
100
1.0
10
100
2
R G, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R G, GATE RESISTANCE (OHMS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
1.6
V GS = 0 V
T J = 25 ° C
I S
di/dt
1.2
t a
t rr
t b
TIME
0.8
0.4
0
t p
I S
0.25 I S
0.4
0.5
0.6
0.7
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
?V SD, SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
versus Current
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